物理工学コースからのおしらせ

物理工学ユニットでは、以下のように談話会を 対面形式で開催させて頂きます。

講師：Prof. Hannu-Pekka Komsa (Microelectronics Research Unit, University of Oulu, Finland)

演題：Engineering point and extended defects in transition metal dichalcogenides

日時：6月 20日（月）14：30～

場所：総合研究棟W701

概要：
Two-dimensional (2D) materials such as graphene, hexagonal boron nitride, and transition metal dichalcogenides have recently received lots of attention due to theirunique material properties and numerous potential applications. The 2D atomic structure can also facilitate distinct defect formation mechanisms and offer new possibilities for defect engineering.
In my talk, I will present the results from layered molybdenum dichalcogenides (MoS₂, MoSe₂, and MoT₂), where vacancy, substitutional, interstitial, and grain boundary defects are introduced by electron irradiation or by various chemical treatments. Due to the 2D nature, transmission electron microscopy and scanning tunneling microscopy imaging allows direct monitoring of formation and agglomeration of defects as well as of larger structural changes. First-principles calculations are used to provide microscopic insight into the energetics and kinetics of these processes. The gained understanding together with the computationally predicted defect properties can be used to guide future efforts in tailoring the 2D material properties via defect engineering.


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世話人：レービガー・ハンネス